DocumentCode :
2618540
Title :
Outlook for SiC devices in traction converters
Author :
Ladoux, P. ; Mermet, M. ; Casarin, J. ; Fabre, J.
Author_Institution :
LAPLACE (Lab. Plasma et Conversion d´´Energie), Univ. de Toulouse, Toulouse, France
fYear :
2012
fDate :
16-18 Oct. 2012
Firstpage :
1
Lastpage :
6
Abstract :
Silicon (Si) IGBTs are widely used in railway traction converters. In the near future, Silicon Carbide (SiC) technology will push the limits of switching devices in the three directions: higher blocking voltage, higher operating temperature and higher switching speed. All in all, these large-gap components should improve the traction chain efficiency and the power-weight ratio. Thus, the topology of the traction converter should be reconsidered from the input stage to the inverter including the DC bus. In this paper, the authors show the prospects for developments in traction voltage source inverters and active front end converters.
Keywords :
insulated gate bipolar transistors; invertors; power convertors; railway electrification; silicon compounds; traction; DC bus; IGBT; SiC; active front end converters; inverter; large-gap components; power-weight ratio; railway traction converters; silicon carbide devices; silicon carbide technology; switching devices; traction chain efficiency; traction voltage source inverters; Insulated gate bipolar transistors; Inverters; MOSFET circuits; Semiconductor diodes; Silicon; Silicon carbide; Switches; Frequency conversion; Power Electronics; Power semiconductor switches; Rail transportation power systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Systems for Aircraft, Railway and Ship Propulsion (ESARS), 2012
Conference_Location :
Bologna
ISSN :
2165-9400
Print_ISBN :
978-1-4673-1370-4
Electronic_ISBN :
2165-9400
Type :
conf
DOI :
10.1109/ESARS.2012.6387463
Filename :
6387463
Link To Document :
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