Specular X-ray reflectivity and small angle X-ray scattering study of ultra-low dielectric constant methylsilesquioxane films

Author

Goh, T.K. ; Wu, S. ; Wong, T.K.S.

Author_Institution

Inst. of Microelectron., Singapore, Singapore

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

458

Lastpage

459

Abstract

In this paper, specular X-ray reflectivity (SXR), small angle X-ray scattering (SAXS) and ion beam analysis (IBA) have been used for the quantitative structural characterization of a proprietary MSQ based porous dielectric material, JSR LKD-5109 with dielectric constant k=2.2. Parametric structural models of the LKD films have been developed for the analysis of both SXR and SAXS data. SXR measurements were performed using a Siemens D5005 X-ray diffractometer equipped with a reflectivity sample stage. Transmission SAXS measurements were conducted using a Bruker AXS Nanostar small angle scattering instrument.

Keywords

X-ray diffraction; X-ray scattering; dielectric materials; dielectric thin films; organic compounds; permittivity; porous materials; reflectivity; MSQ based porous dielectric material; SAXS; X-ray diffraction; X-ray scattering; dielectric thin films; ion beam analysis; parametric structural models; quantitative structural characterization; specular X-ray reflectivity; ultra low dielectric constant methylsilesquioxane films; Dielectric constant; Dielectric materials; Dielectric measurements; Instruments; Ion beams; Optical films; Performance evaluation; Reflectivity; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272187

Filename

1272187