Characterization of base parasitic resistance in analog bipolar transistors

Author

Wang, Peter Z. ; Goff, Larry

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1990

fDate

1-3 May 1990

Firstpage

1923

Abstract

The base current dependency of parasitic base resistance of analog bipolar transistors is discussed. A finite-difference analysis technique is used to examine the relationship between R_b and emitter current crowding, base conductivity modulation, and Kirk effect. It simulates base parasitic resistance of bipolar transistors in all current levels. The method is illustrated using an advanced analog bipolar transistor with a heavily doped emitter. Results of this research have been used to develop high-frequency, high-performance bipolar transistors used in recently developed linear products

Keywords

bipolar integrated circuits; bipolar transistors; difference equations; electric resistance; linear integrated circuits; Kirk effect; analog bipolar transistors; base conductivity modulation; base current dependency; base parasitic resistance; emitter current crowding; finite-difference analysis; heavily doped emitter; high-frequency; Bipolar transistors; Conductivity; Current measurement; Distortion measurement; Electrical resistance measurement; Finite difference methods; Kirk field collapse effect; Proximity effect; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., IEEE International Symposium on

Conference_Location

New Orleans, LA

Type

conf

DOI

10.1109/ISCAS.1990.112071

Filename

112071