• DocumentCode
    2618635
  • Title

    A novel self-aligned gate-lost MOSFET process comparing high-κ candidates

  • Author

    On Chui, Chi ; Kim, Hyoungsub ; McVittie, James P. ; Triplett, Baylor B. ; McIntyre, Paul C. ; Saraswat, Krishna C.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., CA, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    464
  • Lastpage
    465
  • Abstract
    In this paper the two metal oxide dielectrics (ZrO2 and HfO2) deposited in the same chamber with the same technique using a newly developed self-aligned gate-last MOSFET process are compared. The compared results suggested that using either ZrO2 or HfO2 would provide similar on-to-off current ratio at a given device size.
  • Keywords
    MOSFET; dielectric devices; dielectric materials; dielectric thin films; hafnium compounds; zirconium compounds; 300 degC; HfO2; ZrO2; atomic layer deposition; metal oxide dielectrics; self aligned gate lost MOSFET process; Artificial intelligence; Atomic layer deposition; Electrodes; Etching; Gate leakage; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Materials science and technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272191
  • Filename
    1272191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2618635