Capacitance measurements on self-organised MOCVD-grown InGaAs quantum dots

Author

Babinski, Adam ; Leon, R. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

183

Lastpage

186

Abstract

The results of low temperature (4.2 K .. 160 K) magneto-capacitance measurements on vertical structures consisting of a large ensemble of InGaAs quantum dots embedded within GaAs are presented. Series of peaks were observed in the capacitance-voltage (CV) characteristics at liquid helium temperatures. Their attribution to the addition spectrum of 55 nm quantum dot is discussed. The Landau level-like behaviour of CV features in the highest magnetic field confirms our explanation of experimental data

Keywords

III-V semiconductors; Landau levels; capacitance; gallium arsenide; galvanomagnetic effects; indium compounds; interface states; semiconductor growth; semiconductor quantum dots; tunnelling; vapour phase epitaxial growth; 4.2 to 160 K; InGaAs-GaAs; Landau level like behaviour; addition spectrum; capacitance measurements; capacitance-voltage characteristics; electron tunnelling; large ensemble; liquid helium temperatures; low temperature magneto-capacitance measurements; magnetic field; quantum levels; self-organised MOCVD-grown InGaAs quantum dots; vertical structures; Buffer layers; Capacitance measurement; Electrodes; Gallium arsenide; Indium gallium arsenide; Performance evaluation; Quantum capacitance; Quantum dots; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610102

Filename

610102