Run-to-run control schemes for CMP process subject to deterministic drifts

Author

Guo, Ruey-Shan ; Chen, Argon ; Chen, Jin-Jung

Author_Institution

Dept. of Ind. Manage. & Bus. Adm., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

2000

Firstpage

251

Lastpage

258

Abstract

During IC fabrication, the chemical-mechanical polishing (CMP) process usually suffers from a drift in the run-to-run removal rate due to the wear of the polishing pad. In this paper, two run-to-run control schemes, the predictor corrector control (PCC) and adjusted exponentially weighted moving average (d-EWMA) schemes, for processes under deterministic drifts are presented. The control performance of both schemes is analytically derived and the determination of the optimal control parameters is provided. Validation results using the field CMP data demonstrate the control effectiveness of both control schemes

Keywords

chemical mechanical polishing; control system analysis; integrated circuit manufacture; moving average processes; optimal control; predictor-corrector methods; process control; wear; CMP process; IC fabrication; PCC; chemical-mechanical polishing; control effectiveness; control performance; control schemes; d-EWMA; deterministic drifts; exponentially weighted moving average scheme; field CMP data validation; optimal control parameters; polishing pad wear; predictor corrector control; run-to-run control schemes; run-to-run removal rate drift; Chemical industry; Chemical processes; Control systems; Engineering management; Fabrication; Feedback control; Optimal control; Performance analysis; Process control; Textile industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Technology Workshop, 2000

Conference_Location

Hsinchu

Print_ISBN

0-7803-6374-4

Type

conf

DOI

10.1109/SMTW.2000.883103

Filename

883103