Title :
Switched-capacitor (SC) simulation of Hopfield type neural networks
Author :
Nikodem, M. ; Bhattacharyya, B.B. ; Faruque, S.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
Abstract :
A switched-capacitor (SC) structure simulating a general-purpose Hopfield-type neural network is proposed. Existing simulation networks use current summation to achieve the summation effect. In the proposed scheme, this effect is obtained by employing voltage summation achieved with passive SC three pots. The only active components used are the low-gain voltage buffers. Consequently, the structure is capable of operating at high speeds. The scheme is, however, best implemented in MESFET technology
Keywords :
analogue computer circuits; analogue simulation; neural nets; switched capacitor networks; Hopfield type; MESFET technology; SC simulation; high speed operation; low-gain voltage buffers; neural networks; passive SC three pots; switched-capacitor; voltage summation; Computational modeling; Computer networks; Computer simulation; Hopfield neural networks; Low voltage; Neural networks; Neurons; Shape; Switched capacitor networks; Transfer functions;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112099
