DocumentCode
2619517
Title
Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green´s functions
Author
Fonseca, J. ; Kaya, S.
Author_Institution
Ohio Univ., Athens, OH, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
512
Lastpage
513
Abstract
The interface roughness is a crucial factor in DG-MOSFET performance, as indicated by the International Technology Roadmap for semiconductors. A modified nanoMOS simulator is employed based on the non-equilibrium Green´s function (NEGF) to model DG-MOSFETs with rough interfaces. Reconstruction of rough interfaces with accurate spectral models is based on a 1D Fourier synthesis.
Keywords
Fourier analysis; Green´s function methods; MOSFET; interface roughness; semiconductor device models; DG-MOSFET; Fourier synthesis; interface roughness; nanoMOS simulation; nonequilibrium Green´s functions; rough interfaces; Electrons; Fluctuations; Green´s function methods; MOSFETs; Nanoscale devices; Quantization; Scattering; Silicon; Substrates; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272238
Filename
1272238
Link To Document