• DocumentCode
    2619565
  • Title

    Monolithic GaAs programmable parallel-to-serial and serial-to-parallel converters

  • Author

    Burrier, R.A. ; Singh, H.P. ; Sadler, R.A. ; Lopez-Miranda, W. ; Irvine, J.A.

  • Author_Institution
    ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
  • fYear
    1990
  • fDate
    1-3 May 1990
  • Firstpage
    587
  • Abstract
    GaAs monolithic parallel-to-serial (P/S) and serial-to-parallel (S/P) converters which provide significant improvements in speed and power performance over previously reported devices are described. The converters are designed with an architecture that provides automatic frame synchronization, simple cascadability, and low power dissipation. Each chip provides an output clock in phase with the output data to facilitate postprocessing. The P/S and S/P chips operate at data rates of 1.9 Gb/s and 2.1 Gb/s, respectively, and each requires less than 120 mW of power. The chips are implemented with DCFL using a version of ITT´s multifunction self-aligned gate fabrication process
  • Keywords
    III-V semiconductors; code convertors; field effect integrated circuits; gallium arsenide; integrated logic circuits; 1.9 Gbit/s; 120 mW; 2.1 Gbit/s; DCFL; GaAs; MSAG process; automatic frame synchronization; cascadability; direct coupled FET logic; low power dissipation; multifunction self-aligned gate fabrication process; parallel/serial convertor; serial/parallel convertor; time division demultiplexer; time division multiplexer; Automatic control; Circuit testing; Clocks; Counting circuits; FETs; Frequency synchronization; Gallium arsenide; Logic; Power dissipation; Shift registers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1990., IEEE International Symposium on
  • Conference_Location
    New Orleans, LA
  • Type

    conf

  • DOI
    10.1109/ISCAS.1990.112129
  • Filename
    112129