• DocumentCode
    2619690
  • Title

    Temperature dependence and compensation in MOS dosimeters using bias controlled cycled measurement.

  • Author

    Lipovetzky, J. ; Redin, E. ; Inza, M. Garcia ; Carbonetto, S. ; Faigón, A.

  • Author_Institution
    Device Physics Laboratory-Microelectronics, Departamento de FÃ\xadsica, Facultad de IngenierÃ\xada, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV, ARGENTINA
  • fYear
    2008
  • fDate
    19-25 Oct. 2008
  • Firstpage
    1038
  • Lastpage
    1043
  • Abstract
    Temperature dependence of MOS dosimeters response used under the Bias Controlled Cycled Measurement technique is investigated. The use of the biasing technique allows the compensation of temperature-induced changes in the response of the sensors, and reduces at least ten times the dose measurement error caused by undesired threshold voltage shifts.
  • Keywords
    Acceleration; Charge carrier processes; Electron traps; MOSFETs; Nuclear and plasma sciences; Spontaneous emission; Temperature control; Temperature dependence; Temperature sensors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
  • Conference_Location
    Dresden, Germany
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-2714-7
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2008.4774575
  • Filename
    4774575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2619690