DocumentCode
2619906
Title
GLASMOST: a MOSFET model of high numerical quality
Author
Sevat, M.F.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1988
fDate
7-9 Jun 1988
Firstpage
2597
Abstract
A simple MOSFET model of high numerical quality is described. The principles of the derivation are shown, the model equations are specified and their behavior is illustrated. The main characteristic of the model is its unifying view on the domains of operation. The model is derived from a central expression for the channel charge density that has been chosen in such a way that each of the domains of operation follows naturally from it. The model is perfectly symmetric in its drain and source dependencies, so there is no need for interchanging drain and source when the bias point moves from the normal-mode domain to the inverse-mode domain
Keywords
insulated gate field effect transistors; semiconductor device models; GLASMOST; MOSFET model; channel charge density; model equations; Analytical models; Circuit simulation; Convergence of numerical methods; Guidelines; MOSFET circuits; Mathematical model; Nonlinear equations; Numerical models; Transient analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location
Espoo
Type
conf
DOI
10.1109/ISCAS.1988.15473
Filename
15473
Link To Document