Title :
GLASMOST: a MOSFET model of high numerical quality
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
A simple MOSFET model of high numerical quality is described. The principles of the derivation are shown, the model equations are specified and their behavior is illustrated. The main characteristic of the model is its unifying view on the domains of operation. The model is derived from a central expression for the channel charge density that has been chosen in such a way that each of the domains of operation follows naturally from it. The model is perfectly symmetric in its drain and source dependencies, so there is no need for interchanging drain and source when the bias point moves from the normal-mode domain to the inverse-mode domain
Keywords :
insulated gate field effect transistors; semiconductor device models; GLASMOST; MOSFET model; channel charge density; model equations; Analytical models; Circuit simulation; Convergence of numerical methods; Guidelines; MOSFET circuits; Mathematical model; Nonlinear equations; Numerical models; Transient analysis; Voltage;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo
DOI :
10.1109/ISCAS.1988.15473
