DocumentCode
2619965
Title
Temperature effect on a phototransistor used as X-ray beam detector for diagnostic standard radiation qualities
Author
Santos, Luiz Antonio P. ; Filho, João P Brito
Author_Institution
Centro Regional de Ciencias Nucleares, Comissão Nacional de Energia Nuclear (CNEN), Recife - PE, CEP 50740-540 Brazil
fYear
2008
fDate
19-25 Oct. 2008
Firstpage
1108
Lastpage
1109
Abstract
This work presents some temperature effects on the signal-to-noise ratio of a bipolar phototransistor used as X-ray beam detector for diagnostic standard radiation qualities. The temperature of the phototransistor was varied to evaluate how its dark current can decrease and consequently obtain an improvement in the device response. The results show that in the lower temperature such an effect can reduce signal-to-noise ratio in almost 10 dB for the computed tomography radiation quality.
Keywords
Cooling; Dark current; IEC standards; Particle beams; Phototransistors; Radiation detectors; Signal to noise ratio; Temperature sensors; X-ray detection; X-ray detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location
Dresden, Germany
ISSN
1095-7863
Print_ISBN
978-1-4244-2714-7
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2008.4774593
Filename
4774593
Link To Document