DocumentCode
2619976
Title
Saturation of effective channel length increase due to hot carrier degradation in submicron LDD nMOSFETs
Author
Kim, Jae-Yeong ; Kang, Moon-Sang ; Koo, Yong-Seo ; An, Chul
Author_Institution
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
fYear
1996
fDate
8-11 Dec 1996
Firstpage
215
Lastpage
218
Abstract
The effective channel length of submicron LDD nMOSFETs after hot carrier degradation was measured. After the hot carrier stressing, the effective channel lengths were increased with time but saturated after a certain threshold time of about 1000 s. The saturation nature of hot carrier degradation in LDD nMOSFETs can be understood through the saturation of the effective channel length
Keywords
MOSFET; hot carriers; 1000 s; effective channel length increase saturation; hot carrier degradation; submicron LDD nMOSFETs; threshold time; Degradation; Electric variables; Hot carriers; Length measurement; MOS devices; MOSFETs; Stress measurement; Thickness measurement; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-3374-8
Type
conf
DOI
10.1109/COMMAD.1996.610109
Filename
610109
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