DocumentCode
2620077
Title
The electrical behavior of the fundamental high frequency (150 MHz) quartz crystal unit in the plasmatic environment
Author
Tanaka, M. ; Ugajin, T. ; Araki, N. ; Oomura, Y.
Author_Institution
Meidensha Corp., Tokyo, Japan
fYear
1997
fDate
28-30 May 1997
Firstpage
758
Lastpage
764
Abstract
Both photolithography technique and chemical etching process were experimentally employed for producing 150 MHz rectangular AT-cut crystal resonators. A plasma treatment was employed for a frequency adjustment process by etching gold (Au) electrode films. A large frequency shift from a designed frequency was observed. In this paper, the reasons are electrically and chemically explained why the large frequency shifts occurred after a plasma treatment
Keywords
crystal resonators; photolithography; quartz; sputter etching; 150 MHz; Au; SiO2; chemical etching process; electrical behavior; frequency adjustment process; frequency shift; fundamental high frequency quartz crystal unit; photolithography technique; plasma treatment; plasmatic environment; rectangular AT-cut crystal resonators; Capacitance; Chemicals; Electrodes; Etching; Lithography; Plasma applications; Plasma chemistry; Resonance; Resonant frequency; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 1997., Proceedings of the 1997 IEEE International
Conference_Location
Orlando, FL
Print_ISBN
0-7803-3728-X
Type
conf
DOI
10.1109/FREQ.1997.638784
Filename
638784
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