Title :
Performance enhancement of heterojunction field-effect transistors by shifting maximum of electrons from close to heterointerface
Author :
Lour, Wen-Shiung ; Chen, Hung-Ren ; Hung, Ling-Tse ; Chang, Wen-Lung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan-Ocean Univ., Keelung, Taiwan
Abstract :
We report on the fabrication and characteristics of AlGaAs/InGaAs related heterojunction field-effect transistors by MBE. Two methods were used to shift the maximum of electrons from close to the gate-channel heterointerface. Both result in grade-like channels. Due to the superior electron transport properties in InGaAs wells, the studied devices exhibit better characteristics compared with conventional AlGaAs/GaAs and AlGaAs/InGaAs metal-insulator-semiconductor FETs. High breakdown voltages, large turn on voltages, low output conductance, and improved device linearity are obtainable
Keywords :
III-V semiconductors; MISFET; aluminium compounds; characteristics measurement; electric admittance; gallium arsenide; indium compounds; semiconductor technology; AlGaAs-InGaAs; AlGaAs/InGaAs heterojunction field-effect transistors; GaAs; MBE; MISFET; breakdown voltages; device linearity; electron maximum shift; electron transport properties; fabrication; gate-channel heterointerface; grade-like channels; output conductance; performance enhancement; three-terminal I-V characteristics; turn on voltages; Breakdown voltage; Electrons; FETs; Fabrication; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Linearity; Low voltage; Metal-insulator structures;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610110
