Performance enhancement of heterojunction field-effect transistors by shifting maximum of electrons from close to heterointerface

Author

Lour, Wen-Shiung ; Chen, Hung-Ren ; Hung, Ling-Tse ; Chang, Wen-Lung

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan-Ocean Univ., Keelung, Taiwan

fYear

1996

fDate

8-11 Dec 1996

Firstpage

219

Lastpage

222

Abstract

We report on the fabrication and characteristics of AlGaAs/InGaAs related heterojunction field-effect transistors by MBE. Two methods were used to shift the maximum of electrons from close to the gate-channel heterointerface. Both result in grade-like channels. Due to the superior electron transport properties in InGaAs wells, the studied devices exhibit better characteristics compared with conventional AlGaAs/GaAs and AlGaAs/InGaAs metal-insulator-semiconductor FETs. High breakdown voltages, large turn on voltages, low output conductance, and improved device linearity are obtainable

Keywords

III-V semiconductors; MISFET; aluminium compounds; characteristics measurement; electric admittance; gallium arsenide; indium compounds; semiconductor technology; AlGaAs-InGaAs; AlGaAs/InGaAs heterojunction field-effect transistors; GaAs; MBE; MISFET; breakdown voltages; device linearity; electron maximum shift; electron transport properties; fabrication; gate-channel heterointerface; grade-like channels; output conductance; performance enhancement; three-terminal I-V characteristics; turn on voltages; Breakdown voltage; Electrons; FETs; Fabrication; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Linearity; Low voltage; Metal-insulator structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610110

Filename

610110