Title :
Realisation of submicron gate MESFETs using standard optical photolithography
Author :
Kalfane, A. ; Karouta, F. ; Heyker, H.C. ; Kwaspen, J.J.M.
Author_Institution :
Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Netherlands
Abstract :
Submicron gate MESFETs were realised in GaAs-based structures using a shadow technique and optical photolithography. FT of 30 and 50 GHz are obtained with 0.5 and 0.3 μm MESFETs. 0.3 μm MESFETs showed Fmax up to 100 GHz
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; millimetre wave field effect transistors; photolithography; semiconductor technology; 0.3 mum; 0.5 mum; 100 GHz; 30 GHz; 50 GHz; GaAs; GaAs-based structures; RF characteristics; cutoff frequency; maximum frequency of oscillation; optical photolithography; shadow technique; submicron gate MESFETs; Aluminum; Electron optics; FETs; Frequency; Gallium arsenide; Lithography; MESFETs; Metallization; Optical noise; Resists;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610111
