• DocumentCode
    2620199
  • Title

    Realisation of submicron gate MESFETs using standard optical photolithography

  • Author

    Kalfane, A. ; Karouta, F. ; Heyker, H.C. ; Kwaspen, J.J.M.

  • Author_Institution
    Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Netherlands
  • fYear
    1996
  • fDate
    8-11 Dec 1996
  • Firstpage
    223
  • Lastpage
    226
  • Abstract
    Submicron gate MESFETs were realised in GaAs-based structures using a shadow technique and optical photolithography. FT of 30 and 50 GHz are obtained with 0.5 and 0.3 μm MESFETs. 0.3 μm MESFETs showed Fmax up to 100 GHz
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; millimetre wave field effect transistors; photolithography; semiconductor technology; 0.3 mum; 0.5 mum; 100 GHz; 30 GHz; 50 GHz; GaAs; GaAs-based structures; RF characteristics; cutoff frequency; maximum frequency of oscillation; optical photolithography; shadow technique; submicron gate MESFETs; Aluminum; Electron optics; FETs; Frequency; Gallium arsenide; Lithography; MESFETs; Metallization; Optical noise; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
  • Conference_Location
    Canberra, ACT
  • Print_ISBN
    0-7803-3374-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.1996.610111
  • Filename
    610111
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2620199