DocumentCode :
2620220
Title :
Effects of postbake on the microstructure and whisker growth of matte Sn finish
Author :
Yu, Cody Hao ; Kang, H.S. ; Kim, Kwang Soon ; Han, Sang-Wook ; Yang, K.C.
Author_Institution :
Optical Communications Research Center, Electronics and Telecommunications Research Institute, Gwangju 500-480, Korea
fYear :
2007
fDate :
3-5 Oct. 2007
Firstpage :
158
Lastpage :
164
Abstract :
The effects of postbake treatment on a pure matte Snplated copper leadframes under high temperature and humidity conditions were investigated. The samples were divided into two categories: those without postbake treatment (WOPB) and those with postbake treatment (WPB), which exposed at 125□ for 1 hour. The X-ray intensity decreased through all crystal orientations after the postbake treatment. For matte Sn-plated Cu leadframes stored at 55°C/85%RH for 1800 hours, nodule-shaped whiskers were observed on samples WOPB, while none were on samples WPB. The WPB samples have a regular layer of IMCs approximately 27% narrower than the WOPB samples. The IMCs had two distinct layers divided into large-grains and small-grains. The large-grain layers located on the Sn side grew before the small-grain layers. The IMCs in the WOPB and WPB samples were identified as Cu6Sn5 and η-Cu6.26Sn5. IMC precipitates were also observed at the grain boundaries and some IMC precipitates were embedded at the Sn matrix. No Cu3Sn or Kirkendall voids were observed at the interface between the Sn and Cu.
Keywords :
Copper; Environmentally friendly manufacturing techniques; Humidity; Lead; Microstructure; Scanning electron microscopy; Surface morphology; Temperature; Tin; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Packaging Materials: Processes, Properties, and Interfaces, 2007. APM 2007. 12th International Symposium on
Conference_Location :
San Jose, CA, USA
ISSN :
1550-5723
Print_ISBN :
978-1-4244-1338-6
Electronic_ISBN :
1550-5723
Type :
conf
DOI :
10.1109/ISAPM.2007.4419936
Filename :
4419936
Link To Document :
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