DocumentCode :
2620250
Title :
Quantum confinement: mechanism for visible electroluminescence from spark-processed silicon
Author :
Yuan, J. ; Haneman, D. ; Andrienko, I.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
fYear :
1996
fDate :
8-11 Dec 1996
Firstpage :
235
Lastpage :
238
Abstract :
Visible electroluminescence, (EL) showing a broad spectrum with several peaks, occurs from spark-processed silicon. High resolution scanning tunneling microscopy shows that the surface is composed of many small particles, with a significant fraction in the range of two nm required for bandgap enlargement. Hence quantum confinement effects can explain the blue shift of the EL spectrum. The devices show durability, and applications for optical communication between Si wafers appear possible
Keywords :
electroluminescence; elemental semiconductors; energy gap; light emitting diodes; quantum interference phenomena; scanning tunnelling microscopy; silicon; spark machining; spectral line shift; Si; Si wafers; bandgap enlargement; blue shift; broad spectrum; high resolution scanning tunneling microscopy; optical communication; quantum confinement mechanism; spark-processed Si; visible LED; visible electroluminescence; Anodes; Conductivity; Electroluminescence; Light emitting diodes; Ohmic contacts; Optical materials; Potential well; Silicon; Sparks; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
Type :
conf
DOI :
10.1109/COMMAD.1996.610114
Filename :
610114
Link To Document :
بازگشت