The characteristics of resistive gate MOS transistors

Author

du Plessis, M. ; Schieke, P.

Author_Institution

Dept. of Electr. & Electron. Eng., Pretoria Univ., South Africa

fYear

1996

fDate

8-11 Dec 1996

Firstpage

239

Lastpage

242

Abstract

A lateral electric field can be set up in the gate of a resistive gate MOS transistor with more than one gate contact. A one-dimensional device model was developed for this structure and simulations indicated that under certain biasing conditions and with non-rectangular gate dimensions the saturation drain current is a linear function of the applied differential gate voltage. In the sub-threshold region of operation the drain current is a linear function of the differential gate voltage if the gate terminal nearest the source is biased near or just below the threshold voltage, but a square-law relationship is obtained when this gate is biased deeper into sub-threshold

Keywords

CMOS analogue integrated circuits; MOSFET; analogue processing circuits; current distribution; semiconductor device models; voltage distribution; NMOS transistor; analog CMOS designs; analog signal processing component; applied differential gate voltage; biasing conditions; gate contacts; gate terminal biasing; lateral electric field; nonrectangular gate dimensions; one-dimensional device model; resistive gate MOS transistors; saturation drain current; simulations; square-law relationship; subthreshold region; voltage gradients; Africa; Electron mobility; Geometry; MOSFETs; Microelectronics; Semiconductor device modeling; Solid modeling; Threshold voltage; Transconductance; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610115

Filename

610115