Title :
The characteristics of resistive gate MOS transistors
Author :
du Plessis, M. ; Schieke, P.
Author_Institution :
Dept. of Electr. & Electron. Eng., Pretoria Univ., South Africa
Abstract :
A lateral electric field can be set up in the gate of a resistive gate MOS transistor with more than one gate contact. A one-dimensional device model was developed for this structure and simulations indicated that under certain biasing conditions and with non-rectangular gate dimensions the saturation drain current is a linear function of the applied differential gate voltage. In the sub-threshold region of operation the drain current is a linear function of the differential gate voltage if the gate terminal nearest the source is biased near or just below the threshold voltage, but a square-law relationship is obtained when this gate is biased deeper into sub-threshold
Keywords :
CMOS analogue integrated circuits; MOSFET; analogue processing circuits; current distribution; semiconductor device models; voltage distribution; NMOS transistor; analog CMOS designs; analog signal processing component; applied differential gate voltage; biasing conditions; gate contacts; gate terminal biasing; lateral electric field; nonrectangular gate dimensions; one-dimensional device model; resistive gate MOS transistors; saturation drain current; simulations; square-law relationship; subthreshold region; voltage gradients; Africa; Electron mobility; Geometry; MOSFETs; Microelectronics; Semiconductor device modeling; Solid modeling; Threshold voltage; Transconductance; Velocity measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610115
