Title :
Microwave characteristics of the MODFET and the velocity-saturated MOSFET wave-equation
Author :
Roblin, Patrick ; Kang, Sung Choon ; Morkoç, Hadis
Author_Institution :
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
An analytic solution has been derived for the MOSFET/MODFET wave equation including velocity saturation and channel length modulation, and results on its application to the prediction of the microwave characteristics of a MODFET are presented. A theoretical investigation of the high-frequency dependence of the calculated unilateral power gain U has been carried out, and conditions under which a switch from a 6-dB to 12-dB drop per octave is possible at large frequencies are reported. Novel current and voltage gains are proposed which permit meaningful comparison of the ordering of the current and voltage gain cutoff-frequencies with fmax
Keywords :
high electron mobility transistors; insulated gate field effect transistors; semiconductor device models; solid-state microwave devices; MOSFET/MODFET wave equation; analytic solution; channel length modulation; current gain cutoff-frequency; fmax; high-frequency dependence; microwave characteristics; roll off 12 dB per octave; unilateral power; velocity saturation; velocity-saturated MOSFET wave-equation; voltage gain cutoff-frequency; Data mining; FETs; Frequency estimation; Gallium arsenide; HEMTs; MODFET circuits; MOSFET circuits; Poisson equations; Switches; Voltage;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112168
