Title :
Low temperature preparation of the SiO2 films with low interface trap density using ECR diffusion and ECR CVD method
Author :
Il-Hyun Jung ; In-Hwan Oh
Abstract :
Silicon oxide films were grown by Electron Cyclotron Resonance (ECR) diffusion and the ECR CVD method at low temperature. An MOS capacitor with 250 Å of oxide grown by ECR diffusion had a lower interface trap density of 4.24×109 cm-2·eV-1 than direct PECVD and remote PECVD. The measured interface oxide charge density for this film was 6.88×1011 cm-2. In the case of the ECR CVD method, interface trap density was lower than 2.01×1010 cm-2·eV-1
Keywords :
MOS capacitors; capacitance; diffusion; insulating thin films; interface states; plasma CVD; plasma deposition; silicon compounds; 250 angstrom; C-V characteristics; ECR CVD; ECR diffusion; MOS capacitor; Si-SiO2; SiO2 films; interface oxide charge density; low interface trap density; low temperature preparation; Charge measurement; Current measurement; Cyclotrons; Density measurement; Electron traps; MOS capacitors; Resonance; Semiconductor films; Silicon; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610122
