Title :
Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunnelling diode
Author :
Leung, C.S.Y. ; Skellern, D.J.
Author_Institution :
Dept. of Electron., Macquarie Univ., NSW, Australia
Abstract :
We have designed and fabricated In0.53Ga0.47As/AlAs resonant tunnelling diodes on an InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V, respectively, in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0×104 A/cm2 and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental results
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; negative resistance; resonant tunnelling diodes; semiconductor device models; semiconductor quantum wells; semiconductor technology; 0.13 V; 0.65 V; In0.53Ga0.47As-AlAs; InGaAs/AlAs/InP resonant tunnelling diode; InP; InP substrate; coherent tunnelling model; current density; dc I-V characteristic curves; design; fabrication; intervalley electron scattering; modelling; negative differential resistance regions; peak resonant voltages; peak-to-valley-ratio; resonant peak; room temperature; tunnelling current; Current density; Current measurement; Diodes; Electrical resistance measurement; Fabrication; Indium gallium arsenide; Indium phosphide; Resonance; Resonant tunneling devices; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610123
