Title :
Surface passivation of III-V compound semiconductors
Author :
Kapila, A. ; Malhotra, V.
Author_Institution :
Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
Abstract :
Passivation of GaAs and InP surfaces have been accomplished using both wet and dry techniques. The wet techniques include ammonium sulfide based solutions, whereas the dry techniques involve the use H2 and H2S plasmas. These treatments, followed by the deposition of ECR-PECVD silicon nitride, result in significant reduction in the SiN/GaAs (InP) interfacial defect density. The technique is also used for passivating surface-sensitive devices, such as AlGaAs/GaAs heterojunction bipolar transistors
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; passivation; ECR-PECVD silicon nitride; GaAs; H2 plasma; H2S plasma; III-V compound semiconductor; InP; ammonium sulfide solution; dry technique; heterojunction bipolar transistor; interfacial defect density; surface passivation; wet technique; Dielectrics; Gallium arsenide; Hydrogen; III-V semiconductor materials; Indium phosphide; Passivation; Plasma applications; Plasma density; Silicon; Surface treatment;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610126
