Dependence of current interruption performance on the element patterns of etched fuses

Author

Ishikawa, Yozo ; Hirose, Keikichi ; Asayama, M. ; Yasushi

Author_Institution

Saitama Univ. 255 Shimo-Okubo, Saitama

fYear

2007

fDate

10-12 Sept. 2007

Firstpage

51

Lastpage

56

Abstract

This paper is about fuses for the protection of semiconductors. The pattern of their current-interruption area is composed of chemically etched copper plated on a ceramic substrate. Interruption tests revealed that the l²t characteristics of these fuses are greatly influenced by the numbers P and S of parallel and series interruption points. The l²t value of a 6S-32P fuse is 72 % that of a 6S-8P fuse, and the l²t value of a 24S-8P fuse is 24 % that of a 6S-8P fuse. The synergy of these P and S effects reduces the l²t value of a 24S-32P fuse to only 8.6 % that of a 6S-8P fuse.

Keywords

electric fuses; semiconductor devices; ceramic substrate; chemically etched copper; current interruption; current-interruption pattern; etched fuse element patterns; interruption tests; semiconductor protection; Ceramics; Chemical elements; Copper; Etching; Fuses; Power control; Power system protection; Semiconductor devices; Substrates; Testing; P effect; S effect; current-interruption; etched fuse;

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Fuses and their Applications, 2007. ICEFA 2007. 8th International Conference on

Conference_Location

Clermont-Ferrand

Print_ISBN

978-2-84516-363-8

Type

conf

DOI

10.1109/ICEFA.2007.4419965

Filename

4419965