DocumentCode :
2620784
Title :
Spectroscopic investigation of single quantum well structures of semiconductors
Author :
Shen, S.C.
Author_Institution :
Inst. of Tech. Phys., Acad. Sinica, Shanghai, China
fYear :
1996
fDate :
8-11 Dec 1996
Firstpage :
283
Lastpage :
292
Abstract :
A comprehensive and spectroscopic investigation, including absorption (AB), Photoluminescence (PL) and Photoreflectance (PR) experiments on the electronic states and their optical transitions in some single quantum well structures of semiconductors are performed and reported here in this paper. The oscillator intensities of 2D exciton transitions, the strain relaxation as a function of capping layer, the light hole states, the electron(exciton)-phonon interaction and other related physical processes in single quantum wells are addressed and discussed as compared with those in multiquantum well structures. The electronic states on the surface quantum well or quantum step are also investigated and reported
Keywords :
electron-phonon interactions; excitons; oscillator strengths; phonon-exciton interactions; photoluminescence; photoreflectance; semiconductor quantum wells; 2D exciton; absorption spectroscopy; capping layer; electron-phonon interaction; electronic states; exciton-phonon interaction; light hole states; optical transition; oscillator strength; photoluminescence; photoreflectance; semiconductor; single quantum well; strain relaxation; surface step; Absorption; Capacitive sensors; Charge carrier processes; Excitons; High speed optical techniques; Luminescence; Optical sensors; Oscillators; Quantum mechanics; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
Type :
conf
DOI :
10.1109/COMMAD.1996.610127
Filename :
610127
Link To Document :
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