Spectroscopic investigation of single quantum well structures of semiconductors

Author

Shen, S.C.

Author_Institution

Inst. of Tech. Phys., Acad. Sinica, Shanghai, China

fYear

1996

fDate

8-11 Dec 1996

Firstpage

283

Lastpage

292

Abstract

A comprehensive and spectroscopic investigation, including absorption (AB), Photoluminescence (PL) and Photoreflectance (PR) experiments on the electronic states and their optical transitions in some single quantum well structures of semiconductors are performed and reported here in this paper. The oscillator intensities of 2D exciton transitions, the strain relaxation as a function of capping layer, the light hole states, the electron(exciton)-phonon interaction and other related physical processes in single quantum wells are addressed and discussed as compared with those in multiquantum well structures. The electronic states on the surface quantum well or quantum step are also investigated and reported

Keywords

electron-phonon interactions; excitons; oscillator strengths; phonon-exciton interactions; photoluminescence; photoreflectance; semiconductor quantum wells; 2D exciton; absorption spectroscopy; capping layer; electron-phonon interaction; electronic states; exciton-phonon interaction; light hole states; optical transition; oscillator strength; photoluminescence; photoreflectance; semiconductor; single quantum well; strain relaxation; surface step; Absorption; Capacitive sensors; Charge carrier processes; Excitons; High speed optical techniques; Luminescence; Optical sensors; Oscillators; Quantum mechanics; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610127

Filename

610127