DocumentCode :
2620977
Title :
Methods of measuring the electric-field-dependent absorbtion coefficient in quantum confined structures
Author :
Siliquini, J.F. ; Xu, M.G. ; Membreno, G. A Umana ; Clark, A. ; Dell, J.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia
fYear :
1996
fDate :
8-11 Dec 1996
Firstpage :
293
Lastpage :
296
Abstract :
A review of methods measuring the electric-field-dependent absorption coefficient in quantum confined structures is presented. The methods proposed are based on an approximate modeling of a thin film structure which takes into account the reflections at the air-semiconductor interfaces and interference effects within the structure. It is shown that determination of the absorption coefficient from the measured photocurrent and transmitted power is the most robust against measurement errors and easiest to implement for complete modulator structures
Keywords :
absorption coefficients; electroabsorption; semiconductor quantum wells; air-semiconductor interface; electric-field-dependent absorption coefficient measurement; interference; modulator; photocurrent; power transmission; quantum confined structure; reflection; thin film; Absorption; Electric variables measurement; Interference; Measurement errors; Photoconductivity; Potential well; Power measurement; Reflection; Robustness; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
Type :
conf
DOI :
10.1109/COMMAD.1996.610128
Filename :
610128
Link To Document :
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