Effect of Work Function on Double Gate MOSFET

Author

Jatav, Dileep Kumar ; Srivastava, Pankaj

Author_Institution

VLSI Design Lab., ABV-IIITM Gwalior, Gwalior, India

fYear

2010

fDate

21-23 May 2010

Firstpage

1

Lastpage

3

Abstract

The Double gate (DG) silicon on insulator (SOI) metal oxide field effect transistor (MOSFET) is the leading contender for sub 100nm devices. This paper presents a systematic study of effect of work function of metal gates on symmetric double-gate (DG) MOSFET. Two-dimensional simulation tools are used to investigate the effect of work function of gates on Double gate MOSFET. From simulation we observed that by changing the work function of the metal gates of Double gate MOSFET we can change the threshold voltage. Hence by using this technique we can set the appropriate threshold voltage of DG MOSFET at same voltage and we can decrease the leakage current and short channel effects.

Keywords

MOSFET; leakage currents; silicon-on-insulator; SOI; double gate MOSFET; metal oxide field effect transistor; silicon-on-insulator; symmetric double-gate MOSFET; threshold voltage; work function; Appropriate technology; Current density; Degradation; Doping; Electrons; Fabrication; Leakage current; MOSFET circuits; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Future Information Technology (FutureTech), 2010 5th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-6948-2

Type

conf

DOI

10.1109/FUTURETECH.2010.5482678

Filename

5482678