DQWRTD MOSFET for Leakage Reduction and Low Power Application

Performance Analysis of Dual Quantum Well Resonant Tunneling Diode (DQWRTD) MOSFET In nm Regime For Leakage Reduction & Low Power Application with a ´dielectric stack´ instead of the single insulator of MOSFET has been described in this paper. The device suppresses the gate leakage current considerably by utilizing the principle of operation of dual silicon quantum well triple oxide barrier resonant tunneling diodes (RTD) for higher the drive current, faster speed and low leakage power. The device is capable of to overcome the fixed charge in the oxide trap region with equivalence oxide thickness (EOT).