• DocumentCode
    2621160
  • Title

    Misfit dislocations nucleated from the surface in strained-layer heterostructures

  • Author

    Zou, J. ; Cockayne, D.J.H.

  • Author_Institution
    Key Centre for Microscopy & Microanalysis, Sydney Univ., NSW, Australia
  • fYear
    1996
  • fDate
    8-11 Dec 1996
  • Firstpage
    297
  • Lastpage
    300
  • Abstract
    The nucleation of misfit dislocations from the surface in strained-layer heterostructures is considered theoretically. When the interface between the epitaxial layer and the substrate is included, the model suggested by Matthews and his co-workers needs to be modified
  • Keywords
    dislocation nucleation; semiconductor epitaxial layers; semiconductor heterojunctions; epitaxial layer substrate interface; misfit dislocation; strained-layer heterostructure; surface nucleation; Australia; Capacitive sensors; Electron microscopy; Energy barrier; Epitaxial layers; Semiconductor films; Semiconductor process modeling; Shape; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
  • Conference_Location
    Canberra, ACT
  • Print_ISBN
    0-7803-3374-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.1996.610129
  • Filename
    610129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2621160