• DocumentCode
    262132
  • Title

    8.4 A 28Gb/s 1pJ/b shared-inductor optical receiver with 56% chip-area reduction in 28nm CMOS

  • Author

    Tsung-Ching Huang ; Tao-Wen Chung ; Chan-Hong Chern ; Ming-Chieh Huang ; Chih-Chang Lin ; Fu-Lung Hsueh

  • Author_Institution
    TSMC Design Technol., San Jose, CA, USA
  • fYear
    2014
  • fDate
    9-13 Feb. 2014
  • Firstpage
    144
  • Lastpage
    145
  • Abstract
    Next-generation high-performance computing systems require high-bandwidth serial links to transport high-speed data streams among computational blocks. Optical links have recently attracted attention due to their low channel loss at high frequencies, requiring simpler equalization circuits than electrical links. The energy-efficiency of optical links can thus be significantly improved [1-5]. Broadband techniques such as inductive peaking are commonly used in highspeed optical transceivers for bandwidth enhancement at the expense of the chip area. Inductor-less receivers have been proposed [4,6] to reduce chip area but they usually consume more power or have lower data rates at given technology nodes. In this paper, we present two optical receivers that each consists of a pseudodifferential CMOS push-pull transimpedance amplifier (TIA), a DC offset-cancellation circuit, a limiting amplifier (LA) with interleaving active-feedback [6], and a T-Coil fT-doubler output buffer. The block diagram and experimental setup are shown in Fig. 8.4.1. The capacitance of the off-chip GaAs PIN photodetector (PD), which is wire-bonded to the CMOS receiver, is 100fF with 0.4A/W responsivity. The two optical receivers have identical designs except for the LA, in which two different inductive peaking techniques, conventional and shared-inductor, are designed and fabricated on the same die in 28nm CMOS technology.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; differential amplifiers; gallium arsenide; operational amplifiers; optical links; optical receivers; p-i-n photodiodes; photodetectors; CMOS receiver; DC offset-cancellation circuit; GaAs; T-Coil fT-doubler output buffer; TIA; bandwidth enhancement; bit rate 28 Gbit/s; broadband techniques; capacitance 100 fF; chip area; computational blocks; equalization circuits; high-bandwidth serial links; inductive peaking; inductorless receivers; interleaving active-feedback; limiting amplifier; next-generation high-performance computing systems; offchip GaAs PIN photodetector; optical links; optical receivers; pseudodifferential CMOS push-pull transimpedance amplifier; size 28 nm; Adaptive optics; CMOS integrated circuits; Inductors; Optical attenuators; Optical buffering; Optical receivers; Optical sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4799-0918-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2014.6757374
  • Filename
    6757374