Photo-modulated photoluminescence in III-V semiconductor quantum wells

Author

Baars, T. ; Chtanov, A. ; Gal, M.

Author_Institution

Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

301

Lastpage

304

Abstract

We have developed a new technique of modulated photoluminescence (PL) spectroscopy. We show that the signal detected at twice the modulation frequency of the exciting light contains information about the non-linear processes similar to photo-modulated PL experiments. We attribute this non-linear PL signal to the optical modulation of the internal electric field of the quantum well (QW) samples. The method allows the separation of overlapping PL emission lines and provides the emission parameters of the separated lines, even when the PL spectrum itself appears to be featureless

Keywords

III-V semiconductors; optical modulation; photoluminescence; semiconductor quantum wells; III-V semiconductor quantum well; internal electric field; nonlinear signal; optical modulation; photo-modulated photoluminescence; Frequency measurement; Frequency modulation; III-V semiconductor materials; Intensity modulation; Luminescence; Nonlinear optics; Optical modulation; Photoluminescence; Signal detection; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610130

Filename

610130