Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys: an enabling technology for scaled high performance silicon-based heterojunction devices

Author

Sturm, J.C. ; Yang, M. ; Carroll, M.S. ; Chang, C.L.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

3

Lastpage

9

Abstract

Si/Si/sub 1-x/Ge/sub x/ heterostructures have traditionally faced both fundamental and practical limitations in their applications to advanced device technology. These hurdles have been most significantly been the well known critical thickness limitation for pseudomorphic growth and the less known sensitivity of devices to heterojunction process integration. In this paper, we review how Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys grown by rapid thermal chemical vapor deposition (RTCVD) are an enabling technology to overcome both these fundamental and practical issues. Examples are shown for sub-100-nm MOS devices.

Keywords

Ge-Si alloys; MOSFET; chemical vapour deposition; diffusion; heterojunction bipolar transistors; rapid thermal processing; semiconductor growth; semiconductor heterojunctions; semiconductor materials; RTCVD; Si-based heterojunction devices; Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys; SiGeC; chemical vapor deposition; critical thickness limitation; dopant diffusion; enabling technology; heterojunction process integration; pseudomorphic growth; rapid thermal CVD; scaled high performance devices; ultrashort channel MOS devices; Atomic layer deposition; Atomic measurements; Capacitive sensors; Chemical vapor deposition; Conducting materials; Epitaxial growth; Germanium alloys; Organic materials; Photonic band gap; Silicon alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750168

Filename

750168