A 2-D numerical simulation methodology for noise figure optimization in UHV/CVD SiGe HBT´s

Author

Niu, G. ; Ansley, W.E. ; Shiming Zhang ; Cressler, J.D. ; Groves, R.

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

33

Lastpage

37

Abstract

This paper explores the feasibility of combining calibrated AC 2-D numerical simulation and two of the latest Y-parameter-based noise models for predictive noise figure optimization in advanced UHV/CVD SiGe HBT´s. At the operating current where the NE/sub min/ is the lowest, a close agreement between simulation using both noise models and measurement is achieved from 2 GHz to 18 GHz. The impact of collector doping level on noise figure is also discussed.

Keywords

Ge-Si alloys; doping profiles; heterojunction bipolar transistors; microwave bipolar transistors; numerical analysis; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; semiconductor device noise; semiconductor materials; thermal noise; 2 to 18 GHz; 2D numerical simulation methodology; SiGe; UHV/CVD SiGe HBTs; Y-parameter-based noise models; calibrated AC numerical simulation; collector doping level; noise figure optimization; predictive noise figure optimization; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; Noise generators; Noise measurement; Numerical simulation; Optimization methods; Semiconductor process modeling; Silicon germanium; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750172

Filename

750172