X-band SiGe power HBT´s

Author

Strong, R. ; Agarwal, A. ; Smith, T. ; Messham, R. ; Mani, S. ; Hegde, V. ; Hanes, M. ; Nathanson, H. ; Potyraj, P. ; Petrosky, K. ; Knight, T. ; Brabant, P.

Author_Institution

ESSD, Northrop Grumman Corp., Pittsburgh, PA, USA

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

57

Lastpage

60

Abstract

SiGe power heterojunction bipolar transistors were fabricated using the Northrop Grumman 6´´ bipolar line, which features a polysilicon emitter and SiGe epitaxial base. The power cell utilizes a fishbone structure, with an active area of 500 /spl mu/m/sup 2/ and 1100 /spl mu/m emitter perimeter. Discrete cells were packaged for CW power testing in common base mode at 8 GHz. 267 mW of output power was achieved using two cells in parallel in class-A operation; at 120 mW output power, the gain is 8 db.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor materials; 120 mW; 267 mW; 8 GHz; 8 dB; Northrop Grumman 6 inch bipolar line; SiGe; SiGe epitaxial base; SiGe power HBT; X-band device; class-A operation; common base mode; polysilicon emitter; power cell fishbone structure; power heterojunction bipolar transistors; Capacitance; Circuits; Current supplies; Fingers; Germanium silicon alloys; Power generation; Power transistors; Radar; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750194

Filename

750194