Title :
Low noise silicon RF FET design using graded doping and stress
Author :
Franca-Neto, L.M. ; Harris, J.S., Jr.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
This work builds on a new approach to noise phenomena in semiconductor devices developed by the authors (see IEEE IEDM Tech. Dig., Dec. 1997) and named the Ergodic Method. Two suggestions provided by the Ergodic Method are use of graded doping profiles in the channel and stress to design low noise silicon FETs. Experimental evidence is presented to support these predictions. RF graded channel Si MOSFETs, and Si on SiGe MOSFETs were used in the current noise performance measurements.
Keywords :
MOSFET; UHF field effect transistors; doping profiles; elemental semiconductors; semiconductor device noise; silicon; stress effects; Ergodic method; Si; Si RF FET design; Si-SiGe; Si-SiGe MOSFET; graded channel Si MOSFET; graded doping profiles; low noise FET design; noise phenomena; stress effect; Doping profiles; FETs; Germanium silicon alloys; MOSFETs; Radio frequency; Semiconductor device doping; Semiconductor device noise; Semiconductor devices; Silicon germanium; Stress;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-5288-2
DOI :
10.1109/SMIC.1998.750196
