Low noise silicon RF FET design using graded doping and stress

Author

Franca-Neto, L.M. ; Harris, J.S., Jr.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

67

Lastpage

71

Abstract

This work builds on a new approach to noise phenomena in semiconductor devices developed by the authors (see IEEE IEDM Tech. Dig., Dec. 1997) and named the Ergodic Method. Two suggestions provided by the Ergodic Method are use of graded doping profiles in the channel and stress to design low noise silicon FETs. Experimental evidence is presented to support these predictions. RF graded channel Si MOSFETs, and Si on SiGe MOSFETs were used in the current noise performance measurements.

Keywords

MOSFET; UHF field effect transistors; doping profiles; elemental semiconductors; semiconductor device noise; silicon; stress effects; Ergodic method; Si; Si RF FET design; Si-SiGe; Si-SiGe MOSFET; graded channel Si MOSFET; graded doping profiles; low noise FET design; noise phenomena; stress effect; Doping profiles; FETs; Germanium silicon alloys; MOSFETs; Radio frequency; Semiconductor device doping; Semiconductor device noise; Semiconductor devices; Silicon germanium; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750196

Filename

750196