Optimization of nMOS high-frequency transistor characteristics for application in MMICs

Author

van Meer, H. ; Kubicek, S. ; Schreurs, D. ; Lyu, J. ; Nauwelaers, B. ; De Meyer, K.

Author_Institution

IMEC, Leuven, Belgium

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

72

Lastpage

76

Abstract

In this paper, we present the high-frequency (HF) performance of coplanar nMOS transistors with a gate length of 0.1 /spl mu/m. During device fabrication, several splits for the extension implantations have been chosen in order to investigate the DC and HF performance. In our experiment, it is shown that the DC characteristics of the devices with the lowest extension implantation dose give the best result in terms of the short-channel effect, while the HF performance shows the optimum for the highest implantation dose. This shows that the source/drain junction architecture plays a key role in both digital and analog applications.

Keywords

MOS integrated circuits; MOSFET; field effect MMIC; ion implantation; microwave field effect transistors; semiconductor device measurement; 0.1 micron; DC performance; MMIC application; coplanar NMOSFETs; device fabrication; extension implantation dose; high-frequency characteristics; n-channel MOSFET; nMOS HF transistor characteristics; short-channel effect; source/drain junction architecture; CMOS process; CMOS technology; Fabrication; Fingers; Frequency; Hafnium; MMICs; MOS devices; MOSFETs; Microwave devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750197

Filename

750197