Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation

Author

Andersson, Mikael ; Aberg, Markku ; Pohjonen, Helena

Author_Institution

Tech. Res. Centre of Finland, Espoo, Finland

fYear

1988

fDate

7-9 June 1988

Firstpage

2601

Abstract

The authors have developed a method for extracting the channel and gate diode parameters for a GaAs MESFET simultaneously from a single set of measurement data. The method has been applied in comparing nonirradiated and irradiated devices and could be useful in predicting the maximum integration level of GaAs circuits designed to operate under harsh conditions, like radiation. It is especially suitable for digital circuit applications based on GaAs E/D- (enhancement/depletion) and D-MESFET technologies, because of the limited number of MESFETs with different geometries. The procedure has been applied to the extraction of model parameters for gamma- and neutron-irradiated MESFETs, and the results have been compared, used circuit simulation.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; III-V semiconductors; MESFET; channel parameters; circuit simulation; digital circuit applications; gamma irradiated devices; gate diode parameters; harsh conditions; irradiated devices; maximum integration level; model parameter extraction; neutron irradiated devices; nonirradiated devices; simultaneous extraction; Application software; Circuit simulation; Circuit testing; Computational modeling; Data mining; Equations; Gallium arsenide; MESFET circuits; Parameter extraction; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1988., IEEE International Symposium on

Conference_Location

Espoo, Finland

Type

conf

DOI

10.1109/ISCAS.1988.15474

Filename

15474