UTSi(R) CMOS technology for system-on-chip solution

Author

Megahed, M. ; Burgener, M. ; Cable, J. ; Staab, D. ; Reedy, R.

Author_Institution

Peregrine Semicond. Corp., San Diego, CA, USA

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

94

Lastpage

99

Abstract

UTSi (Ultra-Thin Silicon) on insulator technology has the potential of integrating digital, analog, RF and RF matching circuitry on a single chip. The technology is based on bulk CMOS VLSI technology with fully integrated passive components. UTSi CMOS technology provides high speed and superior RF performance transistors, high quality passive elements and excellent isolation due to the insulating substrate. In this paper, UTSi technology is briefly reviewed and critical active device performance presented. Results show that UTSi CMOS process presents a possible road map for system-on-chip solution for wireless communication systems, especially in low power applications.

Keywords

CMOS integrated circuits; UHF integrated circuits; VLSI; high-speed integrated circuits; impedance matching; integrated circuit technology; low-power electronics; mixed analogue-digital integrated circuits; silicon-on-insulator; RF matching circuitry; Si; UTSi CMOS technology; bulk CMOS VLSI technology; digital/analog/RF circuitry integration; high quality passive elements; insulating substrate; integrated passive components; low power applications; system-on-chip application; ultra-thin Si on insulator technology; wireless communication systems; CMOS process; CMOS technology; Insulation; Integrated circuit technology; Isolation technology; Radio frequency; Roads; Silicon on insulator technology; System-on-a-chip; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750201

Filename

750201