Application of a production ready SiGe HBT process to 1.9, 5.7 and 10 GHz low noise MMICs

Author

Erben, U. ; Schumacher, H. ; Schuppen, A. ; Dietrich, H. ; Arndt, J.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

100

Lastpage

104

Abstract

A commercially available SiGe HBT MMIC technology is used to realize low noise amplifiers covering a wide frequency band. Minimum noise figures of 1 dB, 1.6 dB and 3.3 d8 are observed in 1.9, 5.7 and 10 GHz LNAs, respectively. The gain of all amplifiers is in excess of 12 dB. The large signal performance is investigated by two-tone intercept point measurements, where the IIP3 was found to be better than -13 dBm in all amplifiers.

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit design; integrated circuit noise; integrated circuit technology; semiconductor materials; 1 to 3.3 dB; 1.9 to 10 GHz; 12 dB; HBT MMIC technology; IIP3; LNA; SiGe; low noise MMIC; low noise amplifiers; production ready SiGe HBT process; two-tone intercept point measurements; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Low-noise amplifiers; MMICs; Microwave technology; Noise figure; Production; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750202

Filename

750202