DocumentCode :
2621729
Title :
Passivation and reactivation of deep Fe and Cu levels in p-type GaAs
Author :
Radue, C. ; Conibear, A.B. ; Ball, C.A.B.
Author_Institution :
Dept. of Phys., Port Elizabeth Univ., South Africa
fYear :
1996
fDate :
8-11 Dec 1996
Firstpage :
309
Lastpage :
312
Abstract :
Epitaxial p-type GaAs layers were exposed to a hydrogen plasma. Some of the passivated samples were then annealed under reverse bias in order to determine the energy for thermal dissociation of the passivated deep level-hydrogen complex. In particular, the deep levels attributed to iron and copper were examined. Deep Level Transient Spectroscopy (DLTS) has been used to determine the extent of passivation and reactivation of these deep levels. Although passivation of the copper levels has previously been reported, this is the first time that passivation of the iron level has been observed. A dissociation energy of 0.83 eV was determined for the Fe-H complex
Keywords :
III-V semiconductors; annealing; copper; deep level transient spectroscopy; deep levels; gallium arsenide; impurity states; iron; passivation; semiconductor epitaxial layers; DLTS; GaAs:Fe,Cu,H; annealing; deep level; deep level-impurity complex; epitaxial p-type GaAs layer; hydrogen plasma; passivation; reactivation; thermal dissociation energy; Annealing; Copper; Gallium arsenide; Hydrogen; Iron; Passivation; Plasma materials processing; Plasma simulation; Plasma temperature; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
Type :
conf
DOI :
10.1109/COMMAD.1996.610132
Filename :
610132
Link To Document :
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