DocumentCode
2621737
Title
RF-based MOSFET-modeling for resistive mixer design
Author
Schmidt Von Behren, K. ; Breuer, V. ; Klapproth, L. ; Bock, G. ; Leipold, D. ; Schwartz, W. ; Wiedmann, F.
Author_Institution
Inst. fur Nachrichtentech. & Theor. Elektrotech., Tech. Univ. Berlin, Germany
fYear
1998
fDate
18-18 Sept. 1998
Firstpage
119
Lastpage
123
Abstract
We present a balanced resistive MOSFET-mixer in the 2 GHz range. For the design process we use a nonlinear table-model based on S-parameter characterization in many bias points. The mixer is well suited for cellular applications because of nearly zero power consumption.
Keywords
MOSFET; S-parameters; UHF field effect transistors; UHF mixers; cellular radio; semiconductor device models; 2 GHz; RF-based MOSFET-modeling; S-parameter characterization; balanced mixer; bias points; cellular applications; nonlinear table-model; power consumption; resistive mixer design; Analytical models; Circuit noise; Circuit topology; Frequency measurement; MOSFET circuits; Noise measurement; Parameter extraction; Radio frequency; Scattering parameters; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location
Ann Arbor, MI, USA
Print_ISBN
0-7803-5288-2
Type
conf
DOI
10.1109/SMIC.1998.750205
Filename
750205
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