A concept of semiconductor optical routing device utilizing minority carrier drift

Author

Tsukamoto, Hironori ; Boone, Thomas D. ; Woodall, Jerry M.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

516

Lastpage

517

Abstract

A novel concept of semiconductor optical routing device for short distance optical communication system, such as a board to board communication or grid computing. A semiconductor optical routing devices utilizing minority-carrier-drift was discussed. The feasibility of a multi-channel dynamic semiconductor optical routing devices operating for the first time. P-type modulation doped heterostructures were designed for SORDs. At room temperature PL emission from the Al_0.9Ga_0.1As barrier layers.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; minority carriers; optical fibre communication; photoluminescence; semiconductor devices; semiconductor epitaxial layers; 293 to 298 K; Al_0.9Ga_0.1As barrier layers; AlGaAs; PL emission; board to board communication; grid computing; minority carrier drift; p-type modulation doped heterostructures; room temperature; semiconductor optical routing device; short distance optical communication system; Electrons; Gallium arsenide; Optical devices; Optical fibers; Optical filters; Optical modulation; Probes; Routing; Signal generators; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272369

Filename

1272369