DocumentCode
2621795
Title
Noise reduction in SiGe HBT oscillators
Author
Filimon, V. ; Dragojevic, N. ; Strohm, K. ; Luy, J.F.
Author_Institution
Res. Center, Daimler-Benz AG, Ulm, Germany
fYear
1998
fDate
18-18 Sept. 1998
Firstpage
135
Lastpage
138
Abstract
Easy integration of efficient SiGe HBTs and passive elements on high resistivity silicon substrate make silicon technology an attractive alternative for millimeter-wave applications. We present the realization of a 19 GHz oscillator in this technology, where the influence of device specific 1/f noise on the phase noise at the oscillating frequency was reduced. Experimental results confirm theoretical considerations.
Keywords
1/f noise; Ge-Si alloys; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; phase noise; semiconductor materials; 19 GHz; HBT oscillators; SiGe; device specific 1/f noise; high resistivity substrate; millimeter-wave applications; oscillating frequency; passive elements; phase noise; Circuit noise; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise reduction; Oscillators; Phase noise; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location
Ann Arbor, MI, USA
Print_ISBN
0-7803-5288-2
Type
conf
DOI
10.1109/SMIC.1998.750208
Filename
750208
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