DocumentCode :
2621801
Title :
Far-infrared measurements of cyclotron resonance and impurity transitions in bulk n-GaAs in pulsed magnetic fields
Author :
Lewis, R.A. ; Heron, R.J. ; Clark, R.G. ; Starrett, R.P. ; Skougarevsky, A.V.
Author_Institution :
Dept. of Phys., Wollongong Univ., NSW, Australia
fYear :
1996
fDate :
8-11 Dec 1996
Firstpage :
325
Lastpage :
328
Abstract :
The photoconductive response of n-GaAs has been measured under laser radiation in the wavelength range 71 to 513 μm at temperatures as low as 400 mK and at magnetic fields as high as 42 T. A rich variety of spectral features are observed: cyclotron resonance, transitions associated with D-, and transitions to stable and metastable hydrogenic states. The use of a pulsed magnet has extended the magnetic field range over which data is available by a factor of three
Keywords :
III-V semiconductors; cyclotron resonance; gallium arsenide; impurity states; infrared spectra; magneto-optical effects; photoconductivity; 400 mK; 42 T; 71 to 513 micron; GaAs; bulk n-GaAs; cyclotron resonance; far-infrared spectroscopy; impurity transition; laser radiation; metastable hydrogenic state; photoconductivity; pulsed magnetic field; Cyclotrons; Impurities; Laser stability; Laser transitions; Magnetic field measurement; Magnetic resonance; Metastasis; Photoconductivity; Temperature distribution; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
Type :
conf
DOI :
10.1109/COMMAD.1996.610136
Filename :
610136
Link To Document :
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