Title :
Study of piezoelectric effect in GaN thin films using a modified Michelson interferometer
Author :
Muensit, S. ; Wilson, D. ; Guy, I.L.
Author_Institution :
Semicond. Sci. & Technol. Labs., Macquarie Univ., NSW, Australia
Abstract :
A single-beam interferometer has been set up to study the piezoelectric response of III-V semiconductors. Small displacements, induced by a driving voltage at a fixed frequency, can be detected and give a direct measurement of the piezoelectric coefficient. The system calibration is checked using a quartz specimen, and the measured d11 value is 2.34 pm/V. Measurements on GaN films grown by chemical vapour deposition are also reported. Errors arising from non-uniform film deposition and from substrate bending are discussed
Keywords :
CVD coatings; III-V semiconductors; Michelson interferometers; dielectric measurement; gallium compounds; piezoelectric semiconductors; piezoelectric thin films; semiconductor thin films; GaN; GaN thin film; III-V semiconductor; calibration; chemical vapour deposition; measurement errors; piezoelectric coefficient; single-beam Michelson interferometer; Calibration; Chemicals; Displacement measurement; Frequency measurement; Gallium nitride; III-V semiconductor materials; Piezoelectric effect; Piezoelectric films; Semiconductor thin films; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610137
