DocumentCode :
2621834
Title :
Realistic continuum hole states in Si-SiGe quantum wells
Author :
Galiev, V.I. ; Goldys, E.M. ; Kruglov, A.N. ; Polupanov, A.F. ; Tansley, T.L.
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, Russia
fYear :
1996
fDate :
8-11 Dec 1996
Firstpage :
333
Lastpage :
336
Abstract :
An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si1-xGe x quantum-well heterostructures
Keywords :
Ge-Si alloys; Schrodinger equation; elemental semiconductors; semiconductor materials; semiconductor quantum wells; silicon; Si-SiGe; continuum hole states; coupled Schrodinger equations; hole scattering; numerical analysis; potential profile; semiconductor quantum well; strained layer heterostructure; Australia; Capacitive sensors; Eigenvalues and eigenfunctions; Laboratories; Matrices; Particle scattering; Potential well; Quantum well devices; Schrodinger equation; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
Type :
conf
DOI :
10.1109/COMMAD.1996.610138
Filename :
610138
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2621834
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