Title :
Electron transport in low temperature grown GaAs
Author :
Arifin, P. ; Tansley, T.L. ; Goldys, E.M.
Author_Institution :
Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
MBE grown low temperature GaAs layers have been annealed at various temperatures up to 600°C and their structural and transport properties examined. Excess As precipitation is confirmed by TEM measurements. Both hopping and band transport are present in the material annealed at temperatures up to 500°C. The measured mobility for 600°C annealed material agrees well with predictions of Monte Carlo calculations taking full account of precipitate scattering
Keywords :
III-V semiconductors; Monte Carlo methods; annealing; electron mobility; gallium arsenide; hopping conduction; molecular beam epitaxial growth; precipitation; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; 500 to 600 C; GaAs; MBE; Monte Carlo simulation; TEM; annealing; band transport; electron mobility; hopping transport; low temperature grown GaAs; precipitate scattering; structure; Annealing; Electrical resistance measurement; Electrons; Gallium arsenide; Gold; Hall effect; Scattering; Substrates; Temperature; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610142
