Photoluminescence characteristics of Cd and Zn diffused layers in InP

Author

Si, Sang Kee ; Kim, Sung June ; Moon, Youngboo ; Yoon, Euijoon ; Yoo, Ji Beom

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., South Korea

fYear

1996

fDate

8-11 Dec 1996

Firstpage

357

Lastpage

360

Abstract

Cd and Zn diffused InP have been characterized using low temperature PL (photoluminescence). The diffusion was done at three temperatures using evaporated diffusion source in a rapid thermal annealer (RTA). Band to acceptor (B-A) transition dominates in the PL spectra of InP:Cd, whereas InP:Zn shows donor to acceptor (D-A) transitions with blue-shift tendency for higher excitation power. This indicates the presence of much higher concentration of interstitials acting as donors in InP:Zn than in InP:Cd. Furthermore the D-A peak in InP:Zn moves to lower energy (red-shift) for higher diffusion temperature, which is attributed to the increase in number of nonradiative recombination centers

Keywords

III-V semiconductors; cadmium; diffusion; indium compounds; photoluminescence; rapid thermal annealing; semiconductor doping; zinc; InP:Cd; InP:Zn; band to acceptor transitions; blue shift; diffused layer; donor to acceptor transitions; evaporated diffusion source; interstitials; low temperature photoluminescence spectra; nonradiative recombination centers; rapid thermal annealing; red shift; Diffusion processes; Hafnium; Indium phosphide; Moon; Photoluminescence; Plasma temperature; Semiconductor materials; Substrates; Temperature measurement; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610144

Filename

610144