Title :
Photoluminescence characteristics of Cd and Zn diffused layers in InP
Author :
Si, Sang Kee ; Kim, Sung June ; Moon, Youngboo ; Yoon, Euijoon ; Yoo, Ji Beom
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., South Korea
Abstract :
Cd and Zn diffused InP have been characterized using low temperature PL (photoluminescence). The diffusion was done at three temperatures using evaporated diffusion source in a rapid thermal annealer (RTA). Band to acceptor (B-A) transition dominates in the PL spectra of InP:Cd, whereas InP:Zn shows donor to acceptor (D-A) transitions with blue-shift tendency for higher excitation power. This indicates the presence of much higher concentration of interstitials acting as donors in InP:Zn than in InP:Cd. Furthermore the D-A peak in InP:Zn moves to lower energy (red-shift) for higher diffusion temperature, which is attributed to the increase in number of nonradiative recombination centers
Keywords :
III-V semiconductors; cadmium; diffusion; indium compounds; photoluminescence; rapid thermal annealing; semiconductor doping; zinc; InP:Cd; InP:Zn; band to acceptor transitions; blue shift; diffused layer; donor to acceptor transitions; evaporated diffusion source; interstitials; low temperature photoluminescence spectra; nonradiative recombination centers; rapid thermal annealing; red shift; Diffusion processes; Hafnium; Indium phosphide; Moon; Photoluminescence; Plasma temperature; Semiconductor materials; Substrates; Temperature measurement; Zinc;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610144
