Spectroscopic studies of low dimensional electron and hole systems in high quality GaAs-AlGaAs micro-structures

Author

Stadnik, V.A. ; Kane, B.E. ; Clark, R.G. ; Pfeiffer, L.N. ; West, K.W.

Author_Institution

Nat. Pulsed Magnet Lab., New South Wales Univ., Sydney, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

361

Lastpage

364

Abstract

A highly sensitive photoconductivity (PC) technique has been applied to undoped GaAs-AlGaAs micro-structures with either a single interface or a single quantum well and a gate-controlled variable density of electrons or holes. In zero magnetic field measurements we have found a wide absorption band below the fundamental gap of bulk GaAs, which correlates with the population of 2D states. The PC technique has potential for spectroscopic studies of semiconductor nano-structures, such as quantum wire devices, which present difficulties for other conventional spectroscopy methods

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; photoconductivity; semiconductor quantum wells; 2D states; GaAs-AlGaAs; GaAs-AlGaAs microstructure; absorption band; electron density; hole density; low dimensional system; photoconductivity spectroscopy; quantum wire device; semiconductor nanostructure; single interface; single quantum well; Charge carrier processes; Electron optics; Magnetic field measurement; Optical devices; Optical modulation; Optical sensors; Probes; Spatial resolution; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610145

Filename

610145