Title :
Silicon MOSFET-based field induced band-to-band tunneling effect transistor - "FIBTET"
Author :
Kim, Kyung Rok ; Baek, Gwang-Hyun ; Song, Ki-Whan ; Kim, Hyun Ho ; Jung-Im Huh ; Lee, Jong Duk ; Park, Byung-Gook
Author_Institution :
Coll. of Eng., Seoul Nat. Univ., South Korea
Abstract :
In this paper, a novel FIBTETs with degenerate channel doping concentration in the simple SOI MOSFET structure were fabricated and their reproducible NDT (negative-differential transconductance) characteristics was observed at room temperature both for n-FIBTETs and p-FIBTETs. The size dependence of the device characteristics showed a good controllability and reproducibility, which is advantageous for the mass production of silicon-based tunneling devices in the IC industry.
Keywords :
MOSFET; doping profiles; elemental semiconductors; semiconductor doping; silicon; silicon-on-insulator; tunnel transistors; 293 to 298 K; SOI; Si; channel doping concentration; field induced band-band tunneling effect transistor; negative differential transconductance; room temperature; silicon MOSFET; silicon based tunneling devices; Controllability; Doping; Industrial control; MOSFET circuits; Mass production; Reproducibility of results; Silicon; Temperature; Transconductance; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272376
